Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/7365
Title: Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (2 1 1) and (3 1 1) oriented GaAs substrates
Authors: R. Boumaraf
N. Sengouga
R.H. Mari
Af. Meftah
M. Aziz
Dler Jameel
Noor Al Saqri
D. Taylor
M. Henini
Keywords: High index GaAs Capacitance–temperature Deep levels SILVACO simulation
Issue Date: 3-Mar-2016
Abstract: The SILVACO-TCAD numerical simulator is used to explain the effect of different types of deep levels on the temperature depen- dence of the capacitance of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates, namely (3 1 1)A and (2 1 1)A oriented GaAs substrates. For the (3 1 1)A diodes, the measured capacitance–temperature characteristics at different reverse biases show a large peak while the (2 1 1)A devices display a much smaller one. This peak is related to the presence of different types of deep levels in the two structures. These deep levels are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (3 1 1)A structure only majority deep levels (hole deep levels) were observed while both majority and minority deep levels were pres- ent in the (2 1 1)A diodes. The simulation software, which calcu- lates the capacitance–voltage and the capacitance–temperature characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behavior of the capacitance–temperature properties. A further evidence to confirm that deep levels are responsible for the observed phenom- enon is provided by a simulation of the capacitance–temperature characteristics as a function of the ac-signal frequency.
URI: http://dspace.univ-biskra.dz:8080/jspui/handle/123456789/7365
Appears in Collections:Communications Nationales

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