Veuillez utiliser cette adresse pour citer ce document : http://hdl.handle.net/123456789/7265
Titre: Computer modelling and analysis of the photodegradation effect in a-Si:H p–i–n solar cell
Auteur(s): A.F Bouhdjar
L. Ayat
AM. Meftah
N. Sengouga
AF. Meftah
Mots-clés: Key words: a-Si:H; Staebler–Wronski effect; p–i–n
Date de publication: 27-fév-2016
Résumé: Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a numerical modelling of the photodegradation effect in the a-Si:H p–i–n solar cell under continuous illumination. We first considered the simple case of a monochromatic light beam with a wavelength between 530–540 nm non uniformly absorbed, then the global standard solar spectrum (AM 1.5) illumination is taken into account. The photodegradation is analysed on the basis of the resulting changes in the free carrier’s densities, recombination rate, band structure, electrical potential and field, space charge, and current densities. Changes in the cell’s external parameters: the open circuit voltage Voc, the short circuit current density Jsc, the fill factor FF and the maximum power density Pmax are also presented. DOI: 10.1088/1674-4926/36/1/014002
URI/URL: http://dspace.univ-biskra.dz:8080/jspui/handle/123456789/7265
Collection(s) :Publications Internationales

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