Veuillez utiliser cette adresse pour citer ce document : http://hdl.handle.net/123456789/3619
Titre: THE EFFECT OF ANNEALING ON THE PROPERTIES OF ZNO:AL FILMS GROWN BY RF MAGNETRON SPUTTERING
Auteur(s): Saâd Rahmane
Mohamed Abdou Djouadi
Mohamed Salah Aida
Mots-clés: magnetron sputtering, Al doped ZnO, annealing temperature, properties.
Date de publication: 12-jui-2013
Résumé: The effect of annealing temperature ranged from 200 to 600 °C on the structural, optical and electrical properties of aluminum doped zinc oxide (ZnO:Al) films was reported. The thin films were deposited on glass and silicon substrates by rf magnetron sputtering method using ZnO target (diameter 7,5 cm) mixed with 2 wt.% Al2O3. It has been found that the crystal structure of ZnO:Al films is hexagonal with c-axis preferential orientation. With an increase in the annealing temperature the intrinsic compressive stress was found to decrease, and near stress-free film was obtained after annealing at 600 °C. A resistivity of 1.25x10-3 cm and an average transmittance above 90 % in visible range were obtained for films prepared at room temperature.
URI/URL: http://dspace.univ-biskra.dz:8080/jspui/handle/123456789/3619
ISSN: 1112 - 3338
Collection(s) :CS N 18

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