Veuillez utiliser cette adresse pour citer ce document : http://hdl.handle.net/123456789/2713
Titre: Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor
Auteur(s): N. Sengouga
Af.Meftah
Am.Meftah
M.Henini
Mots-clés: Substratetraps Gate voltage GaAs MESFET SILVACOsimulation
Date de publication: 19-mai-2014
Résumé: Wereportonanumericalsimulationoftheresponseofsubstratetrapstoavoltage appliedtothegateofagalliumarsenidefieldeffecttransistor(GaAsFET)using proprietary simulationsoftware.Thesubstrateisassumedtocontainshallowacceptors compensatedbydeeplevels.Theratiobetweenthedensitiesofdeepandshallowlevelsis consideredtobeonehundred,whichisatypicalvalueforsemi-insulatingsubstrates. Althoughseveraltrapsmaybepresentinthesubstratebutonlythemostcommonly observedonesareconsidered,namelyholetrapsrelatedtoCuandCr,andthefamiliar native electrontrapEL2.Thecurrent–voltagecharacteristicsoftheGaAsFETarecalculated in theabsenceaswellasinthepresenceoftheabovementionedtraps.Itwasfoundthat the holetrapsareaffectedbythegatevoltagewhiletheelectrontrapisnot.Thiseffecton the responseofholetrapsisexplainedbythefactthatthequasi-holeFermilevelinthe substrateisdependentonthegatevoltage.However,theelectronquasi-Fermilevelinthe substrateisinsensitivetothegatevoltageandthereforeelectrontrapsarenotperturbed.
URI/URL: http://dspace.univ-biskra.dz:8080/jspui/handle/123456789/2713
Collection(s) :Publications Internationales



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