Veuillez utiliser cette adresse pour citer ce document : http://hdl.handle.net/123456789/2335
Titre: Small signal modeling of pHEMTs and analysis of their microwave performance
Auteur(s): Z. Hamaizia
N. Sengouga
M. Missous
M.C.E. Yagoub
Mots-clés: pHEMT, extraction, small signal modeling, LANs, GaAs FET, Canada
Date de publication: 18-avr-2014
Résumé: Accurate extraction of the small-signal equivalent circuit of GaAs microwave Field Effect Transistors (GaAs FET) is crucial for efficient design of microwave analog circuits such as Low Noise Amplifiers (LNAs). This study proposed an improved direct analytical extraction procedure. Its efficiency was demonstrated through the characterisation of two 1 μm gate-length pseudomorphic heterojonction transistors. Link http://docsdrive.com/pdfs/medwelljournals/jeasci/2010/252-256.pdf
URI/URL: http://dspace.univ-biskra.dz:8080/jspui/handle/123456789/2335
Collection(s) :Publications Internationales



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