Veuillez utiliser cette adresse pour citer ce document : http://hdl.handle.net/123456789/2322
Titre: Design of a wideband low noise amplifier for radio-astronomy applications
Auteur(s): Z. Hamaizia
N. Sengouga
M. Missous
M.C.E. Yagoub
Mots-clés: HEMT amplifiers; Modeling of microwave systems; Analogue electronic circuits
Date de publication: 16-avr-2013
Résumé: n this work, we discuss the design of two low noise amplifiers (LNA) based on 1mm gate-length pHEMT InP transistors using two topologies. Designed for radio-astronomy applica-tions, the first is a cascode circuit with a maximum gain of 15dB and noise figure of 0.6dB, while the second is a 2-stage cascaded amplifier with 27 dB gain and 0.63dB noise figure. The two am-plifiers exhibit an input 1-dB compression point of -22dBm and -26dBm respectively, and a third order input intercept point of -10dBm and -5dBm, respectively. Link http://iopscience.iop.org/1748-0221/5/04/P04008/pdf/1748-0221_5_04_P04008.pdf
URI/URL: http://dspace.univ-biskra.dz:8080/jspui/handle/123456789/2322
Collection(s) :Publications Internationales

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