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Date de publicationTitreAuteur(s)
18-avr-2014Extraction of important parameters of a silicon diode used as particles detectorSaadoune; L. Dehimi; N. Sengouga; W. Terghini; M.L. Megherbi
19-mai-2014Irradiation effect on the electrical characteristics of an AlGaAs/GaAs based solar cell: Comparison between electron and proton irradiation by numerical simulationW. Laiadi; Af. Meftah; N. Sengouga; Am. Meftah
29-fév-2016Irradiation effect on the electrical characteristics of an AlGaAs/GaAs based solar cell: Comparison between electron and proton irradiation by numerical simulationW. Laiadi; Af. Meftah; N. Sengouga
19-mai-2014Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge DensityA. Saadoune; S. J. Moloi; K. Bekhouche; L. Dehimi; M. McPherson; N. Sengouga; B. K. Jones
29-fév-2016Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge DensityA. Saadoune; S. J. Moloi; K. Bekhouche; L. Dehimi; M. McPherson; N. Sengouga; B. K. Jones
29-fév-2016Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge DensityA. Saadoune; S. J. Moloi; K. Bekhouche; L. Dehimi; M. McPherson; N. Sengouga; B. K. Jones
27-fév-2016Modeling the effect of defects on the performance of an n-CdO/p-Si solar cellS. Chala; N. Sengouga; F. Yakuphanoglu
3-mar-2016Modeling the effect of defects on the performance of an n-CdO/p-Si solar cellS. Chala; N. Sengouga; F. Yakuphanoglu
19-mai-2014Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristicsA. Saadoune; L. Dehimi; N. Sengouga; M. McPherson; B.K. Jones
19-mai-2014Modellingof semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the current–voltage characteristicsL. Dehimi; N. Sengouga; B.K. Jones
27-fév-2016Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistorsM. Adaika; Af Meftah; N. Sengouga; M. Henini
3-mar-2016Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistorsM. Adaika; Af Meftah; N. Sengouga; M. Henini
28-fév-2016Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodesK. Bekhouche; N. Sengouga; B. K. Jones
19-mai-2014Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1 xAs window on the sensitivity of a pþ–n–nþ GaAs solar cell to 1 MeV electron irradiationA.F. Meftah; N. Sengouga; A.M. Meftah; S. Khelifi
27-fév-2016Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p–i–n solar cellL. Ayat; A. F. Bouhdjar; AF. Meftah; N. Sengouga
19-mai-2014Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistorN. Sengouga; Af.Meftah; Am.Meftah; M.Henini
29-fév-2016Numerical simulation of the type inversion in n+-p-p+ Si solar cells, used for space applications, under 1 MeV electron irradiationA.Hamache; N. Sengouga; Af. Meftah
3-mar-2016Numerical simulation of the type inversion in n+-p-p+ Si solar cells, used for space applications, under 1 MeV electron irradiationA.Hamache; N. Sengouga; Af. Meftah
28-fév-2016Numericalsimulationoftheresponseofsubstratetraps to avoltageappliedtothegateofagalliumarsenidefield effecttransistorN. Sengouga; Af.Meftah; Am.Meftah; M.Henini
18-avr-2014Small signal modeling of pHEMTs and analysis of their microwave performanceZ. Hamaizia; N. Sengouga; M. Missous; M.C.E. Yagoub