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Date de publicationTitreAuteur(s)
28-fév-2016Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodesK. Bekhouche; N. Sengouga; B. K. Jones
19-mai-2014Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1 xAs window on the sensitivity of a pþ–n–nþ GaAs solar cell to 1 MeV electron irradiationA.F. Meftah; N. Sengouga; A.M. Meftah; S. Khelifi
27-fév-2016Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p–i–n solar cellL. Ayat; A. F. Bouhdjar; AF. Meftah; N. Sengouga
19-mai-2014Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistorN. Sengouga; Af.Meftah; Am.Meftah; M.Henini
29-fév-2016Numerical simulation of the type inversion in n+-p-p+ Si solar cells, used for space applications, under 1 MeV electron irradiationA.Hamache; N. Sengouga; Af. Meftah
3-mar-2016Numerical simulation of the type inversion in n+-p-p+ Si solar cells, used for space applications, under 1 MeV electron irradiationA.Hamache; N. Sengouga; Af. Meftah
28-fév-2016Numericalsimulationoftheresponseofsubstratetraps to avoltageappliedtothegateofagalliumarsenidefield effecttransistorN. Sengouga; Af.Meftah; Am.Meftah; M.Henini
18-avr-2014Small signal modeling of pHEMTs and analysis of their microwave performanceZ. Hamaizia; N. Sengouga; M. Missous; M.C.E. Yagoub
18-avr-2014Small signal modeling of pHEMTs and analysis of their microwave performanceZ. Hamaizia; N. Sengouga; M. Missous; M.C.E. Yagoub
3-mar-2016SMALL-SIGNAL TIME-DOMAIN PHYSICAL/ELECTRICAL FET MODELING APPROACHN.A. Abdeslam; S. Asadi; N. Sengouga; M.C.E. Yagoub